New SCALE-IDriver SiC- MOSFET Gate Driver for maximum efficiency and safety

by:MOSO     2019-12-27

silicon carbide (SiC) MOSFET can greatly improve the switching performance of high-power inverter applications, and can provide higher breakdown field strength and switching frequency while enhancing thermal performance. However, SiC requires faster short circuit protection in a more compact design, which poses a unique challenge to gate drivers-- It is necessary to support various gate voltages in different SiC architectures.

PI new SIC1182K SCALE-IDriver™ The IC is a commercially available single-channel SiC MOSFET Gate Driver that provides high efficiency and can provide maximum peak output gate current without external push stages. After setting, it can support different Gate drive voltages to meet the requirements of commercially available SiC MOSFET.

SIC1182K uses PI's FluxLink™ Communication technology can significantly improve reliability and provide 1200V reinforced insulation. Perfect protection features include:

•Advanced Active clamp (AAC)

• Ultra-fast short circuit detection

• Overcurrent fault shutdown

•Original and secondary undervoltage protection (UVLO)

its main applications include uninterruptible power supply (UPS) , Photovoltaic system, servo driver, welding machine and power supply.

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